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The SX-R 20-1 consists of a passive near-field probe for measuring magnetic fields at high clock frequencies up to 20 GHz on electronic components and integrated circuits during the development phase.

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The small size of the SX-R 3-1 magnetic field probe is used for high-resolution measurement of high-frequency magnetic fields, thus enabling the identification of the smallest components as potential sources of interference.

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The size of the electrode at the bottom of the SX-E 03 probe is about 4x4mm, which is used to detect and locate small electric field sources, such as wires and individual components on integrated circuit boards.

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SX-B 3-1 is a passive near-field probe. It detects the magnetic field lines emitted vertically by the device.

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The SX 1 near-field probe set consists of 3 passive near-field probes for measuring electric and magnetic fields on electronic modules during the R&D phase in the frequency range from 1GHz to 10GHz.

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This probe set is used to measure 1 ohm/150 ohm conducted emissions using the direct coupling method on IC pins.

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RFS-R 50-1 is a passive near-field probe, this type of magnetic field probe is designed for on-site measurement on components, equipment or cables, the measuring distance is about 3cm.

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 RFS-R 3-2 near-field probe, with high resolution, is used to directly detect the radio frequency magnetic field on electronic components, such as the magnetic field of pin area, integrated circuit casing, wire, bypass capacitor and other components.

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The small tip of the RFS-R 0.3-3 magnetic field probe enables high-frequency magnetic field measurements to be made with high resolution, allowing the smallest interfering components to be identified.

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The electrodes of the RFS-E 10 electric field probe are located under the probe, about 0.2mm wide, which can locate the smallest electric field sources, such as 0.1mm wide wires, single pins of high pin count integrated circuits.

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